Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity
作者： L. N. Oveshnikov , E. I. Nekhaeva
DOI: 10.1134/S1063782617100177
关键词: Scattering 、 Magnetoresistance 、 Magnetic impurity 、 Weak localization 、 Quantum Hall effect 、 Physics 、 Condensed matter physics 、 Quantum well 、 Dephasing 、 Hall effect
摘要: Magnetotransport in heterostructures with spatial separation of the Mn magnetic impurity and an InGaAs quantum well is studied. An analysis observed effect weak localization using Hikami–Larkin–Nagaoki formula leads to anomalously small value (0.4) prefactor. Obtained data indicate that inelastic e–e scattering can be dominant dephasing mechanism structures under study. Analysis conductivity magnetoresistance indicates role spin-dependent at fluctuations subsystem, which consistent increase amplitude negative Drude as a result cooling. The nature anomalous Hall studied investigated; particular, indications are obtained there presence topological contribution low temperatures.
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