Magnetotransport studies of the two-dimensional electron gas in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells
作者： T.W Kim , M Jung
DOI: 10.1016/S0038-1098(99)00166-0
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摘要: Abstract Low-temperature electrical transport properties of the two-dimensional electron gas (2DEG) in modulation-doped Al0.25Ga0.75As/In0.18Ga0.82As/In0.25Ga0.75As/GaAs asymmetric step quantum wells were studied by Shubnikov–de Haas (S–dH) and Van der Pauw Hall-effect measurements. The angular dependent S–dH measurements at 1.5 K demonstrated clearly existence a quasi-2DEG InxGa1−xAs wells, fast Fourier transformation results for data indicate occupation one subband wells. carrier density effective mass determined from 1.76×1012 cm−2 0.06603m0, respectively. electronic energy, energy wavefunction, Fermi calculated self-consistent method taking into account exchange-correlation effects together with strain nonparabolicity effects. These present can help improve understanding potential applications new kinds high-speed devices.
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