作者: C. Diaz-Paniagua , M.A. Hidalgo , A.F. Braña , A. Urbina , F. Batallan
DOI: 10.1016/S0038-1098(99)00036-8
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摘要: Abstract The effective mass in the two-dimensional electron gas of a delta-doped In x Ga 1− As HEMT structure from variation amplitude Shubnikov–de Haas oscillations was determined; with temperature measurements obtained as function magnetic field and gate voltage. shows at intermediate fields an oscillatory behaviour, periodic filling factor maximum for even factors. Its relation to behaviour cyclotron g is discussed. increases density inversion field.