Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra
作者： G. B. Galiev , E. A. Klimov , S. S. Pushkarev , A. A. Zaytsev , A. N. Klochkov
DOI: 10.1134/S1063782620110093
关键词: Arsenic 、 Spectral line 、 Analytical chemistry 、 Doping 、 Gallium 、 Crystallographic defect 、 Silicon 、 Photoluminescence 、 Epitaxy 、 Materials science
摘要: The results of studies the surface morphology, electrical characteristics, and photoluminescence properties epitaxial GaAs films grown by molecular-beam epitaxy on GaAs(110) substrates doped with Si are reported. A series samples is at a temperature 580°C arsenic/gallium flow ratio in range from 14 to 80. By analyzing spectra samples, behavior atoms interpreted consideration for occupation Ga or As sites (i.e., formation SiGa SiAs point defects) vacancies arsenic gallium VAs VGa. In analysis, (110)-oriented compared similar (100)- (111)A-oriented substrates.
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