Germanium Saturated with Gallium Antimonide
作者： J. O. McCaldin , D. B. Wittry
DOI: 10.1063/1.1735962
关键词: Germanium 、 Electron probe microanalysis 、 Zone melting 、 Gallium antimonide 、 Electron mobility 、 Temperature gradient 、 Analytical chemistry 、 Impurity 、 Chemistry 、 Solubility
摘要: Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°C. Electron probe microanalysis indicated 4.83×1020 Ga atoms and 2.36×1020 Sb atoms/cc in the material an estimated error about 10%. Thus solubility is greatly enhanced presence Ga, though reverse not true. Hall measurements semiquantitative agreement chemical concentration that carrier mobility much affected compensating impurity.
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