Interaction between Arsenic and Aluminum in Germanium

摘要: The behavior of As in Ge containing regions doped with ∼5×10^20∕cc Al was studied. solubility is enhanced tenfold or more by the heavy doping, on basis (1) measurements conductivity type and (2) negative results a search for compounds x‐ray diffraction. diffusion fronts studied observing progress p‐n junction formed 10^(17)∕cc In. When region doping added, displaced. displacements indicate that diffusing attracted to doping. These are similar those Reiss, Fuller, others Li Si, though detailed understanding not yet available present case.