作者: P Prabukanthan , R Dhanasekaran , None
DOI: 10.1016/J.MATERRESBULL.2007.10.004
关键词: Stoichiometry 、 Crystallography 、 Crystal growth 、 Single crystal 、 Band gap 、 Electron mobility 、 Absorption spectroscopy 、 X-ray crystallography 、 Raman spectroscopy 、 Chemistry 、 Analytical chemistry
摘要: The single crystals with stoichiometry close to 1:1:2 of CuInTe{sub 2} (CIT) have been grown by chemical vapor transport (CVT) technique using iodine as the transporting agent at different growth temperatures. Single crystal X-ray diffraction studies confirmed chalcopyrite structure for and volume unit cell is found be same conditions. Energy dispersive (EDAX) analysis CIT shows almost stoichiometric compositions. Scanning electron microscope (SEM) reveals kink, step layer patterns on surface depending optical absorption spectra as-grown conditions show that they band gap energies (1.0405 eV). Raman exhibit a high intensity peak A{sub 1} mode 123 cm{sup -1}. Annealed 473 K in nitrogen atmosphere 40 h higher hole mobility (105.6 2}V{sup -1}s{sup -1}) concentration (23.28 x 10{sup 17} -3}) compared values (63.69 V{sup -1} s{sup (6.99 15} crystals.