作者: H Cabrera , I Zumeta-Dubé , D Korte , P Grima-Gallardo , F Alvarado
DOI: 10.1016/J.JALLCOM.2015.08.128
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摘要: Abstract In this paper we report on the preparation of CuFeInTe3 and its thermoelectric properties. Optical diffuse reflectance Raman scattering spectroscopies, as well X-ray powder diffraction were also carried out. Unprecedented for CuFeInTe3, a direct an indirect band gap found from absorption spectrum. From Hall effect measurements at 300 K carrier concentration (n), electrical conductivity (σ) mobility (μ) determined. order to investigate whether material is suitable applications, Seebeck coefficient (S), thermal (κ) σ function temperature measured. The coefficients showed that alloying CuInTe2 with Fe2+ produces change original p-type n-type causes decrease in κ value, while leaving unchanged. Relatively large S values respect CuInTe2, which explained basis probable electron effective mass increase due incorporation. It was found, conductivities increasing range between 300 450 K, figure merit (zT) reaches 0.075 0.126 at 450 K respectively. Thus, zT increases temperature, reaching larger than those reported CuInTe2.