SiGe based Ka-band reflection type phase shifter for integrated phased array transceivers

作者: N. Mazor , O. Katz , R. Ben-Yishay , D. Liu , A. Valdes Garcia

DOI: 10.1109/MWSYM.2016.7539968

关键词: Insertion lossOptoelectronicsKa bandElectrical engineeringPhase (waves)Phase shift moduleMaterials sciencePhased arrayDifferential phaseBiCMOSDie (integrated circuit)

摘要: Phase shifters are key components in phased array systems. A low loss and variations SiGe differential phase shifter for the Ka-band is described. This bidirectional reflection type (RTPS) design employs a novel diagonal configuration coupler it controlled by single voltage node. The measured results show state of art insertion 5±1 dB, tuning range larger than 180 degrees, frequency 26.5 GHz to 32.8 (21%). At 30 GHz, exhibits 4.8 variation ±0.4 more 206 degrees shift range. RTPS was fabricated standard BiCMOS process occupies 0.64 mm2 die area.

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