Phase diagram of Ge:(C, Sn)
作者： V.A. Elyukhin , P. Rodríguez Peralta
DOI: 10.1016/J.SPMI.2009.07.034
关键词: Physical chemistry 、 Strain energy 、 Impurity 、 Atmospheric temperature range 、 Phase diagram 、 Self assembling 、 Materials science 、 Carbon 、 Nanoclusters
摘要: Abstract We present the self-assembling conditions of 1C4Sn tetrahedral nanoclusters with carbon atoms in their centers Ge:(C, Sn) wide temperature range as a function impurity contents and temperature. These are phase diagram since nanocluster occurrence completion when all results continuous transitions. The significant decrease strain energy after formation is cause self-assembling. It shown that depends only on Sn content. content obtained for temperatures up to 855 ∘ C.
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