Self-assembling of 1C4Sn and 4C10Sn clusters in Ge:(C, Sn)
作者： V. A. Elyukhin
DOI: 10.1063/1.3580265
关键词:
摘要: Carbon and Sn co-doping transforms Ge into Ge-rich CxSnyGe1−x−y alloy. Self-assembling of 1C4Sn 4C10Sn clusters decreases the strain energy. These cluster formation processes are competing. The self-assembling conditions represented from 0 °C to 800 °C at 5 × 10−5 ≤ x 0.015 1 × 10−4 y 0.015. demonstrate that only form if carbon is a minority impurity. Both types with preferential over occur impurity concentrations nearly equal or
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