Multi-layer semiconductor photovoltaic device

摘要: A semiconductor photovoltaic device is comprised of 2n layers alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n an integer greater than 1. Each layer has a thickness which less the diffusion length minority carrier therein. The are excited by light incident on to thereby cause majority carriers be accumulated in so as forward bias all junctions. As result this biasing, injected across first junction fr0m one into then traverse next succeeding layer. thus adapted supply voltage current load.