Multiple junction semiconductor device fabrication

摘要: 916,889. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 22, 1960 [Dec. 30, 1959], No. 44023/60. Class 37. A semi-conductor structure comprises zones of alternate conductivity types meeting at PN junctions which are alternately tunnel and normal type. The arrangement provides a device having current-voltage characteristic as shown in Fig. 5. have successively increasing impurity concentrations to provide characteristics with values. may also be used photo-electric voltage provided by the effectively connected series junctions. 4 shows 12a-12d 13a-13c. manufactured epitaxial deposition described Specification 916,887 such providing sources germanium, iodine gallium tri-iodide deposit on substrate germanium. resistivity is controlled controlling ratio (gallium iodide) germanium iodide. concentration each junction increased slightly greater than previous one. All high content exhibits low resistance both alternating direct current. material consist silicon, indium antimonide, antimonide or arsenide impurities aluminium, boron, indium, arsenic phosphorus.