Maximizing cubic phase group III-nitride on patterned silicon
作者： Liu Richard , Bayram Can
DOI:
关键词: Deposition (law) 、 Optoelectronics 、 Nitride 、 Layer (electronics) 、 Gallium nitride 、 Dielectric 、 Phase (matter) 、 Silicon 、 Groove (joinery) 、 Electronic engineering 、 Materials science
摘要: A device including a non-polarization material includes number of layers. first layer silicon (100) defines U-shaped groove having bottom portion and sidewalls (111) at an angle to the (100). second patterned dielectric on top vertical groove. third buffer covers layer. fourth gallium nitride is deposited within groove, cubic (c-GaN) formed merged growth fronts hexagonal (h-GaN) that extend from (111), wherein deposition thickness (h) above such c-GaN completely h-GaN between sidewalls.
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