Nitride semiconductor light emitting device and method of manufacturing the same
作者： Shinichiro Nozaki , Kazuhiko Yamanaka , Toshiyuki Takizawa
DOI:
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摘要: A nitride semiconductor light emitting device includes: an uneven substrate having structure in which recesses are formed; a first layer of conductive type formed on the structure; layer; and second layer, wherein each protrusion has bottom made material or composition thermal expansion coefficient larger than layer.
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