Quantum efficiency of GaN photocathode under different illumination
作者：
DOI: 10.1063/1.3614555
关键词: Photocurrent 、 Photoconductivity 、 Physics 、 Optoelectronics 、 Photomultiplier 、 Photocathode 、 Deuterium 、 Optics 、 Wide-bandgap semiconductor 、 Quantum efficiency 、 Monochromatic color
摘要: GaN samples are activated by Cs/O under illumination of deuterium lamp, 300 nm monochromatic light with power 70 μW and 35 μW, respectively. Photocurrent is detected before activation lamp. Quantum efficiency (QE) tested after activation. The results indicate that have higher QE than no obvious difference between different light. photocurrent inhibits the adsorption Cs on surface, which decrease GaN.
harvard.edu
aip.org
sci-hub.se 参考文章(28)
V Bougrov, ME Levinshtein, Sergey L Rumyantsev, A Zubrilov, MS Shur, Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe John Wiley. ,(2001)
Ivan V. Bazarov, Bruce M. Dunham, Xianghong Liu, Matt Virgo, Amir M. Dabiran, Fay Hannon, Hisham Sayed, Thermal emittance and response time measurements of a GaN photocathode Journal of Applied Physics. ,vol. 105, pp. 083715- ,(2009) , 10.1063/1.3110075
Jianliang Qiao, Benkang Chang, Yunsheng Qian, Xiaoqing Du, Yijun Zhang, Xiaohui Wang, Preparation of negative electron affinity gallium nitride photocathode 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology. ,vol. 7658, ,(2010) , 10.1117/12.864677
A. A. Pakhnevich, V. V. Bakin, G. É. Shaĭbler, A. S. Terekhov, Emission of ballistic photoelectrons from p-GaN(Cs,O) with the effective negative electron affinity Physics of the Solid State. ,vol. 49, pp. 2070- 2075 ,(2007) , 10.1134/S1063783407110091
I. Mizuno, T. Nihashi, T. Nagai, M. Niigaki, Y. Shimizu, K. Shimano, K. Katoh, T. Ihara, K. Okano, M. Matsumoto, M. Tachino, Development of UV image intensifier tube with GaN photocathode Proceedings of SPIE, the International Society for Optical Engineering. ,vol. 6945, ,(2008) , 10.1117/12.778539
J. Stock, G. Hilton, T. Norton, B. Woodgate, S. Aslam, M. Ulmer, Progress on development of UV photocathodes for photon-counting applications at NASA GSFC Proceedings of SPIE. ,vol. 5898, pp. 1- 8 ,(2005) , 10.1117/12.617517
D. J. Leopold, J. H. Buckley, P. Rebillot, High quantum efficiency ultraviolet/blue AlGaN /InGaN photocathodes grown by molecular-beam epitaxy Journal of Applied Physics. ,vol. 98, pp. 043525- ,(2005) , 10.1063/1.1999026
Oswald H. W. Siegmund, Anton S. Tremsin, John V. Vallerga, Jason B. McPhate, Jeffrey S. Hull, James Malloy, Amir M. Dabiran, Gallium Nitride Photocathode Development for Imaging Detectors Proceedings of SPIE. ,vol. 7021, ,(2008) , 10.1117/12.790076
M. A. Moram, T. C. Sadler, M. Häberlen, M. J. Kappers, C. J. Humphreys, Dislocation movement in GaN films Applied Physics Letters. ,vol. 97, pp. 261907- ,(2010) , 10.1063/1.3532965
Francisco Machuca, Zhi Liu, J. R. Maldonado, S. T. Coyle, P. Pianetta, R. F. W. Pease, Negative electron affinity group III-nitride photocathode demonstrated as a high performance electron source Journal of Vacuum Science & Technology B. ,vol. 22, pp. 3565- 3569 ,(2004) , 10.1116/1.1813453