作者: C. Ulutas , O. Erken , M. Gunes , C. Gumus
DOI: 10.1016/J.PHYSB.2020.412175
关键词: Thin film 、 Analytical chemistry 、 Materials science 、 Crystallite 、 Electrical resistivity and conductivity 、 Band gap 、 Chemical bath deposition 、 Wurtzite crystal structure 、 Indium tin oxide 、 Substrate (electronics)
摘要: Abstract Gamma-MnS thin films were deposited on glass and indium tin oxide (ITO) substrates at 40 °C temperature by Chemical Bath Deposition (CBD) method. XRD measurements revealed that the gamma-MnS are polycrystalline in wurtzite phases show a preferential orientation along c-axis. The grain size of onto ITO calculated as 327 nm 189 nm, respectively. energy band gap also 3.56 eV, 3.74 eV, refractive index visible region (400–700 nm) measured 2.1 1.63 for substrates, Hall measurement showed n-type conductivity resistivity 7.1 × 105 Ωcm, 3.04 × 102