Electroluminescence, Bistable Switching, and Dielectric Breakdown of Nb2O5 Diodes

作者: T. W. Hickmott

DOI: 10.1116/1.1492715

关键词: ElectroluminescenceDielectric strengthNegative resistanceBreakdown voltageOptoelectronicsBistabilityOxideMaterials scienceThermal conductionDiode

摘要: Nb–Nb2O5–metal diodes, after voltage breakdown, exhibit current-controlled negative resistance and switching between two stable conduction states. Before Nb–Nb2O5–Au diodes are electroluminescent with hole injection occurring at the Nb2O5–Au interface. After electroluminescence is closely related to switching. The energy of emitted radiation has maxima 1.3 1.6 eV. Electroluminescence both polarity- voltage-dependent, indicating that injection, not heating, produces electroluminescence. Increased accompanies diode Microscopic observation shows bistable dielectric breakdown occur small conducting regions in oxide. Destructive Nb–Nb2O5–Cu differs from diodes.

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