Hysteretic current–voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

作者: Manuel Villafuerte , Gabriel Juárez , Silvia P. de Heluani , David Comedi

DOI: 10.1016/J.PHYSB.2007.04.035

关键词:

摘要: Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucuman. Facultad Ciencias Exactas y Tecnologia. Departamento Fisica. Laboratorio Fisica del Solido; Argentina. Consejo Investigaciones Cientificas Tecnicas. Centro Cientifico Tecnologico Conicet - Tucuman; Argentina

参考文章(21)
T. W. Hickmott, Electroluminescence, Bistable Switching, and Dielectric Breakdown of Nb2O5 Diodes Journal of Vacuum Science and Technology. ,vol. 6, pp. 828- 833 ,(1969) , 10.1116/1.1492715
A. Baikalov, S. Tsui, Y. Y. Sun, Y. Y. Xue, Y. Q. Wang, B. Shen, C. W. Chu, B. Lorenz, Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface Applied Physics Letters. ,vol. 83, pp. 957- 959 ,(2003) , 10.1063/1.1590741
B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition Journal of Applied Physics. ,vol. 98, pp. 033715- ,(2005) , 10.1063/1.2001146
F. Argall, Switching phenomena in titanium oxide thin films Solid-state Electronics. ,vol. 11, pp. 535- 541 ,(1968) , 10.1016/0038-1101(68)90092-0
W. R. Hiatt, T. W. Hickmott, BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES Applied Physics Letters. ,vol. 6, pp. 106- 108 ,(1965) , 10.1063/1.1754187
Doo Seok Jeong, Herbert Schroeder, Rainer Waser, Impedance spectroscopy of TiO2 thin films showing resistive switching Applied Physics Letters. ,vol. 89, pp. 082909- ,(2006) , 10.1063/1.2336621
M. J. Rozenberg, I. H. Inoue, M. J. Sánchez, Nonvolatile Memory with Multilevel Switching: A Basic Model Physical Review Letters. ,vol. 92, pp. 178302- ,(2004) , 10.1103/PHYSREVLETT.92.178302
K. L. Chopra, Avalanche‐Induced Negative Resistance in Thin Oxide Films Journal of Applied Physics. ,vol. 36, pp. 184- 187 ,(1965) , 10.1063/1.1713870
M. Hamaguchi, K. Aoyama, S. Asanuma, Y. Uesu, T. Katsufuji, Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films Applied Physics Letters. ,vol. 88, pp. 142508- ,(2006) , 10.1063/1.2193328
S. Q. Liu, N. J. Wu, A. Ignatiev, Electric-pulse-induced reversible resistance change effect in magnetoresistive films Applied Physics Letters. ,vol. 76, pp. 2749- 2751 ,(2000) , 10.1063/1.126464