Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system

作者: Matthew L. Chin , Prakash Periasamy , Terrance P. O'Regan , Matin Amani , Cheng Tan

DOI: 10.1116/1.4818313

关键词: AnodeOptoelectronicsMaterials scienceResponsivityCurrent densityCathodeDielectricQuantum tunnellingDiodeMetal-insulator-metalInstrumentation (computer programming)Electrical and Electronic EngineeringProcess Chemistry and TechnologyMaterials ChemistryElectronic, Optical and Magnetic MaterialsSurfaces, Coatings and Films

摘要: The authors report the performance of various planar metal–insulator–metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting …

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