Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density
作者： I. V. Rozhansky , D. A. Zakheim
DOI: 10.1134/S1063782606070190
关键词: Current density 、 Common emitter 、 Electroluminescence 、 Materials science 、 Acceptor 、 Electron mobility 、 Light-emitting diode 、 Quantum efficiency 、 Heterojunction 、 Optoelectronics
摘要: The study is devoted to theoretical explanation of a decrease in the electroluminescence efficiency as pump current increases, which characteristic light-emitting-diode (LED) heterostructures based on AlInGaN. Numerical simulation shows that increase external quantum at low densities J ≈ 1 A/cm2 caused by competition between radiative and nonradiative recombination. > hole injection into active region. It shown depth acceptor energy level AlGaN emitter, well electron mobilities p-type region, plays an important role this effect. A modified LED heterostructure suggested with should not occur.
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