Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells

作者： Changqing Chen , Vinod Adivarahan , Jinwei Yang , Maxim Shatalov , Edmundas Kuokstis

关键词: Optoelectronics 、 p–n junction 、 Non polar 、 Multiple quantum 、 Wavelength 、 Optics 、 Sapphire 、 Materials science 、 Diode 、 Ultraviolet 、 Plane (geometry) 、 General Engineering 、 General Physics and Astronomy

摘要: We report a pn-junction ultraviolet light-emitting diode (LED) with peak emission at 363 nm using a-plane GaN-AlGaN multiple quantum wells over r-plane sapphire. The wavelength does not shift increasing pump currents-therefore establishing the feasibility of high-efficiency non-polar light emitting devices.