Effect of strain on Ni-(GeSn) x contact formation to GeSn nanowires
作者： M. Noroozi , M. Moeen , A. Abedin , M. S. Toprak , H. H. Radamson
DOI: 10.1557/OPL.2014.559
关键词: Materials science 、 Contact formation 、 Nanowire 、 Optoelectronics 、 Nanotechnology 、 Strain (chemistry)
摘要: In this study, the formation of Ni-(GeSn)x on strained and relaxed Ge1-xSnx (0.01≤x≤ 0.03) nanowires in contact areas has been investigated. The epi-layers were grown at different temperatures (290 ...
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