Ge1−xSnx stressors for strained-Ge CMOS

摘要: Abstract In this paper, we propose the fabrication of whole strained Ge complementary metal–oxide-semiconductor (CMOS) with 1− x Sn materials as stressors to outperform state-of-the-art uniaxial compressive Si CMOS. have larger lattice constant than that Ge, which can apply strain into channel region. Firstly, demonstrated p-type doped growth by using either B implantation or in situ Ga doping technique. B-implanted formation case, fully B-doped layers no precipitation be obtained even after solid phase epitaxial regrowth (SPER). However, serious dislocation generation layer was occurred during SPER. This is caused point defects introduced implantation. order avoid crystal damage, also Ga-doped growth. achieve without and any defect generation. Secondary, Ni(Ge y ) for metal/semiconductor contact investigated crystalline qualities. The polycrystalline on contents ranging from 2.0% 6.5% annealing at 350 °C 550 °C achieved. Additionally, case Ni/Ge /Ge sample a content 3.5%, an Ni 2 (Ge formed. surface roughness due agglomeration increases increasing temperature. Therefore, low thermal budget must required high content.