Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
作者： B. Vincent , Y. Shimura , S. Takeuchi , T. Nishimura , G. Eneman
DOI: 10.1016/J.MEE.2010.10.025
关键词: Optoelectronics 、 Binary alloy 、 Germanium 、 MOSFET 、 Strained silicon 、 Commutation 、 Materials science 、 Semiconductor alloys 、 Silicon 、 Lattice constant
摘要: … article as embedded source/drain stressors for Ge channels. Our simulation results indicate that a … This paper first proposes simulation results detailing the effectiveness of GeSn source/…
core.ac.uk
elsevier.com
researchgate.net 
sci-hub.se 参考文章(9)
S.E. Thompson, G. Sun, K. Wu, J. Lim, T. Nishida, Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs international electron devices meeting. pp. 221- 224 ,(2004) , 10.1109/IEDM.2004.1419114
Dirch H Petersen, Ole Hansen, Torben M Hansen, Peter Bøggild, Rong Lin, Daniel Kjær, Peter F Nielsen, Trudo Clarysse, Wilfried Vandervorst, Erik Rosseel, Nick S Bennett, Nick EB Cowern, None, Review of electrical characterization of ultra-shallow junctions with micro four-point probes Journal of Vacuum Science & Technology B. ,vol. 28, pp. 27- 33 ,(2010) , 10.1116/1.3224898
S. Gaudet, C. Detavernier, C. Lavoie, P. Desjardins, Reaction of thin Ni films with Ge : Phase formation and texture Journal of Applied Physics. ,vol. 100, pp. 034306- ,(2006) , 10.1063/1.2219080
A. Satta, E. Simoen, T. Clarysse, T. Janssens, A. Benedetti, B. De Jaeger, M. Meuris, W. Vandervorst, Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium Applied Physics Letters. ,vol. 87, pp. 172109- ,(2005) , 10.1063/1.2117631
G. Eneman, E. Simoen, P. Verheyen, K. De Meyer, Gate Influence on the Layout Sensitivity of $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}\ \hbox{S/D}$ and $\hbox{Si}_{1 - y}\hbox{C}_{y}\ \hbox{S/D}$ Transistors Including an Analytical Model IEEE Transactions on Electron Devices. ,vol. 55, pp. 2703- 2711 ,(2008) , 10.1109/TED.2008.2003231
J. Kouvetakis, J. Menendez, A.V.G. Chizmeshya, TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon Annual Review of Materials Research. ,vol. 36, pp. 497- 554 ,(2006) , 10.1146/ANNUREV.MATSCI.36.090804.095159
Shotaro Takeuchi, Akira Sakai, Koji Yamamoto, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima, Growth and structure evaluation of strain-relaxed Ge1- xSnx buffer layers grown on various types of substrates international sige technology and device meeting. ,vol. 22, ,(2007) , 10.1088/0268-1242/22/1/S54
R. Loo, G. Wang, L. Souriau, J. C. Lin, S. Takeuchi, G. Brammertz, M. Caymax, High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning Journal of The Electrochemical Society. ,vol. 157, ,(2010) , 10.1149/1.3244564
Shotaro Takeuchi, Yosuke Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, Matty Caymax, Roger Loo, Osamu Nakatsuka, A. Sakai, S. Zaima, (Invited) Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices 218th ECS Meeting. ,vol. 33, pp. 529- 535 ,(2010) , 10.1149/1.3487583