Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium
作者： A. Satta , E. Simoen , T. Clarysse , T. Janssens , A. Benedetti
DOI: 10.1063/1.2117631
关键词: Analytical chemistry 、 Amorphous solid 、 Recrystallization (metallurgy) 、 Boron 、 Boron diffusion 、 Ion implantation 、 Germanium 、 Doping 、 Materials science 、 Rapid thermal annealing 、 Radiochemistry
摘要: … In summary, upon annealing of boron implants in germanium (be it crystalline or preamorphized), no diffusion can be observed for the thermal budgets (300 C–600 C) applied in this …
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