Method for Selective Growth of Highly Doped Group IV - Sn Semiconductor Materials
作者： Andriy Hikavyy , Roger Loo , Benjamin Vincent
DOI:
关键词:
摘要: Disclosed are methods for selective deposition of doped Group IV-Sn materials. In some embodiments, the method includes providing a patterned substrate comprising at least first region and second region, where an exposed semiconductor material insulator material, performing two cycles grow-etch cyclic process. Each cycle depositing IV-Tin (Sn) layer, layer IV precursor, Sn dopant using etch gas to back deposited layer.
lens.org 参考文章(6)
Ching-Wei Cheng, Method for transferring a file through a km device between associated computers ,(2009)
Errol Sanchez, Yi-Chiau Huang, David K. Carlson, Methods for depositing germanium-containing layers ,(2011)
B. Vincent, F. Gencarelli, H. Bender, C. Merckling, B. Douhard, D. H. Petersen, O. Hansen, H. H. Henrichsen, J. Meersschaut, W. Vandervorst, M. Heyns, R. Loo, M. Caymax, Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition Applied Physics Letters. ,vol. 99, pp. 152103- ,(2011) , 10.1063/1.3645620
B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, R. Loo, Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Microelectronic Engineering. ,vol. 88, pp. 342- 346 ,(2011) , 10.1016/J.MEE.2010.10.025
Richard Soref, John Kouvetakis, John Tolle, Jose Menendez, Vijay D’Costa, None, Advances in SiGeSn technology Journal of Materials Research. ,vol. 22, pp. 3281- 3291 ,(2007) , 10.1557/JMR.2007.0415
Michael A. Todd, Precursors and processes for low temperature selective epitaxial growth ,(2006)