Advances in SiGeSn technology
作者： Richard Soref , John Kouvetakis , John Tolle , Jose Menendez , Vijay D’Costa
关键词: Chemical vapor deposition 、 Optoelectronics 、 Diode 、 Lattice constant 、 Band gap 、 Ternary operation 、 Materials science 、 Laser 、 Wafer 、 Infrared
摘要: We recently reported the chemical vapor deposition growth of binary Ge1–ySny and ternary Ge1–ySixSny alloys directly on Si wafers using SnD4, Ge2H6 (di-germane), SiH3GeH3, (GeH3)2SiH2 sources. is an intriguing infrared (IR) material that undergoes indirect-to-direct band-gap transition for y 0.2 eV, even if Sn concentration limited to range < 0.2. This property can be used develop a variety novel devices, from multicolor detectors multiple-junction photovoltaic cells. A linear interpolation lattice constants between Si, Ge, α–Sn shows it possible obtain SiGeSn with band gap constant larger than Ge. shall use this feature make tensile-strained Ge-on-SiGeSn telecomm detector improved performance. To date, record high tensile strain (0.40%) has been achieved in Ge layers grown GeSn-buffered where systematically tuned by adjusting buffer. tensile-strain-induced direct also laser diodes electroptical modulators.
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