Versatile buffer layer architectures based on Ge1−xSnx alloys
作者： R. Roucka , J. Tolle , C. Cook , A. V. G. Chizmeshya , J. Kouvetakis
DOI: 10.1063/1.1922078
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摘要: We describe methodologies for integration of compound semiconductors with Si via buffer layers and templates based on the GeSn system. These exhibit atomically flat surface morphologies, low defect densities, tunable thermal expansion coefficients, unique ductile properties, which enable them to readily absorb differential stresses produced by mismatched overlayers. They also provide a continuous selection lattice parameters higher than that Ge, allows matching technologically useful III-V compounds. Using this approach we have demonstrated growth GaAs, GeSiSn, pure Ge at temperatures Si(100). materials display extremely high-quality structural, morphological, optical properties opening possibility versatile schemes directly silicon.
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