A microstructural study of the CdTe/ZnTe film morphology as related to the Si substrate orientation

摘要: Abstract A series of CdTe/ZnTe films was grown by molecular beam epitaxy (MBE) onto Si substrates. We examine the relationships between film morphology, ZnTe growth method, and orientation. The substrates' degree miscut from [1 1 1] direction ranged 0° to 29.5°. Transmission electron microscopy (TEM) X-ray diffraction (XRD) studies show that substrate orientation is maintained ZnTe/CdTe epilayers only for low angles. For higher angles, does not match substrate, in some cases dependent on methods used deposit buffer layer.