Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces
作者： G. Brill , Y. Chen , N. K. Dhar , R. Singh
DOI: 10.1007/S11664-003-0058-6
关键词:
摘要: Tellurium-adsorption studies were conducted on {111}-type Si surfaces that are off-cut from the {111} in range of 0–30° both nonpassivated-and arsenic-passivated surfaces. Relative surface coverages as a function Te exposure time and Si-surface orientation obtained with in-situ x-ray photoelectron spectroscopy (XPS). The XPS results indicate coverage increases step density increases. In contrast, Te-adsorption nonpassivated-Si showed no dependence between surface-step density. Subsequent ZnTe CdTe molecular-beam epitaxial growth these high-Miller-index further validate step-edge nucleation model. Additionally, it was observed CdTe-epilayer did not always reproduce Si-substrate initial conditions used.
harvard.edu
springer.com
sci-hub.se 参考文章(10)
N. K. Dhar, P. R. Boyd, M. Martinka, J. H. Dinan, L. A. Almeida, N. Goldsman, CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics Journal of Electronic Materials. ,vol. 29, pp. 748- 753 ,(2000) , 10.1007/S11664-000-0219-9
D. J. Chadi, Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces Physical Review B. ,vol. 29, pp. 785- 792 ,(1984) , 10.1103/PHYSREVB.29.785
M. Kawano, A. Ajisawa, N. Oda, M. Nagashima, H. Wada, HgCdTe and CdTe(1̄ 1̄ 3̄)B growth on Si(112)5° off by molecular beam epitaxy Applied Physics Letters. ,vol. 69, pp. 2876- 2878 ,(1996) , 10.1063/1.117348
Terence J. de Lyon, Scott M. Johnson, Charles A. Cockrum, William J. Hamilton, Owen K. Wu, Direct MBE growth of CdZnTe on Si(100) and Si(112) substrates for large-area HgCdTe IRFPAs Growth and Characterization of Materials for Infrared Detectors. ,vol. 2021, pp. 114- 124 ,(1993) , 10.1117/12.164935
Yu.G Sidorov, M.V Yakushev, D.N Pridachin, V.S Varavin, L.D Burdina, The heteroepitaxy of II–VI compounds on the non-isovalent substrates (ZnTe/Si) Thin Solid Films. ,vol. 367, pp. 203- 209 ,(2000) , 10.1016/S0040-6090(00)00674-X
N. K. Dhar, N. Goldsman, C. E. C. Wood, Tellurium desorption kinetics from (112) Si: Si-Te binding energy Physical Review B. ,vol. 61, pp. 8256- 8261 ,(2000) , 10.1103/PHYSREVB.61.8256
T. J. de Lyon, D. Rajavel, S. M. Johnson, C. A. Cockrum, Molecular‐beam epitaxial growth of CdTe(112) on Si(112) substrates Applied Physics Letters. ,vol. 66, pp. 2119- 2121 ,(1995) , 10.1063/1.113922
R. D. Bringans, Arsenic passivation of Si and Ge surfaces Critical Reviews in Solid State and Materials Sciences. ,vol. 17, pp. 353- 395 ,(1992) , 10.1080/10408439208242194
R. Sporken, S. Sivananthan, K. K. Mahavadi, G. Monfroy, M. Boukerche, J. P. Faurie, Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) Applied Physics Letters. ,vol. 55, pp. 1879- 1881 ,(1989) , 10.1063/1.102159
NK Dhar, CEC Wood, A Gray, HY Wei, L Salamanca‐Riba, JH Dinan, Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 14, pp. 2366- 2370 ,(1996) , 10.1116/1.588862