In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers
作者： M. Jaime-Vasquez , M. Martinka , R. N. Jacobs , M. Groenert
DOI: 10.1007/S11664-006-0283-X
关键词:
摘要: A detailed analysis of the As-exposed Si (112) and subsequent Te exposure was performed. X-ray photoelectron spectroscopy shows that Te- surface had 70% As 27% coverage, respectively. Direct coverage measurement with ion scattering (ISS) (111) is completely covered by As, about 78% 20% Te, Finally, using ISS shadowing effects, it found atoms were positioned mainly on step edges.
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