Nucleation of ZnTe on the As-Terminated Si(112) Surface
作者： M. Jaime-Vasquez , M. Martinka , R.N. Jacobs , J.D. Benson
DOI: 10.1007/S11664-007-0128-2
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摘要: We employ a suite of surface analysis techniques that probe the outermost ZnTe/As-Si(112) to generate an understanding initial stages heteroepitaxial HgCdTe/CdTe/ZnTe/As-Si(112) layer formation. Ion scattering spectroscopy (ISS), reflection-high energy electron diffraction (RHEED), along with nondestructive depth profiles by angle-resolved x-ray photoelectron (XPS) are successfully applied clarify and support nucleation ZnTe formation on As-terminated Si(112) substrate. Data indicate slow growth first layer. In addition, no evidence thick island exists. The current process generates full coverage after six nine MBE cycles. order fully understand details substrate, we present inelastic background Tougaard method study morphology.
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