Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
作者： Lanxiang Wang , Shaojian Su , Wei Wang , Xiao Gong , Yue Yang
DOI: 10.1016/J.SSE.2013.01.031
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摘要: Abstract High-mobility strained Ge 0.958 Sn 0.042 p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH 4 ) 2 S] surface passivation were demonstrated. A ∼10 nm thick fully-strained single crystalline GeSn layer was epitaxially grown on (1 0 0) substrate as the channel layer. (NH S performed for surface, followed by gate stack formation. p-MOSFETs show decent electrical characteristics and a peak effective mobility of 509 cm /V s, which is highest reported obtained so far.
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Ruilong Xie, Thanh Hoa Phung, Mingbin Yu, Chunxiang Zhu, Effective Surface Passivation by Novel $\hbox{SiH}_{4}$ – $\hbox{NH}_{3}$ Treatment and BTI Characteristics on Interface-Engineered High-Mobility $\hbox{HfO}_{2}$ -Gated Ge pMOSFETs IEEE Transactions on Electron Devices. ,vol. 57, pp. 1399- 1407 ,(2010) , 10.1109/TED.2010.2046992
J.J.-H. Chen, N.A. Bojarczuk, H. Shang, M. Copel, J.B. Hannon, J. Karasinski, E. Preisler, S.K. Banerjee, S. Guha, Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge IEEE Transactions on Electron Devices. ,vol. 51, pp. 1441- 1447 ,(2004) , 10.1109/TED.2004.833593
Genquan Han, Shaojian Su, Qian Zhou, Pengfei Guo, Yue Yang, Chunlei Zhan, Lanxiang Wang, Wei Wang, Qiming Wang, Chunlai Xue, Buwen Cheng, Yee-Chia Yeo, Dopant Segregation and Nickel Stanogermanide Contact Formation on $\hbox{p}^{+} \hbox{Ge}_{0.947}\hbox{Sn}_{0.053}$ Source/Drain IEEE Electron Device Letters. ,vol. 33, pp. 634- 636 ,(2012) , 10.1109/LED.2012.2186430
F.E. Leys, R. Bonzom, B. Kaczer, T. Janssens, W. Vandervorst, B. De Jaeger, J. Van Steenbergen, K. Martens, D. Hellin, J. Rip, G. Dilliway, A. Delabie, P. Zimmerman, M. Houssa, A. Theuwis, R. Loo, M. Meuris, M. Caymax, M.M. Heyns, Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality Materials Science in Semiconductor Processing. ,vol. 9, pp. 679- 684 ,(2006) , 10.1016/J.MSSP.2006.08.034
Jay Deep Sau, Marvin L Cohen, None, Possibility of increased mobility in Ge-Sn alloy system Physical Review B. ,vol. 75, pp. 045208- ,(2007) , 10.1103/PHYSREVB.75.045208
C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, M. El-Kazzi, F. Bellenger, G. Brammertz, M. Hong, J. Kwo, M. Meuris, J. Dekoster, M.M. Heyns, M. Caymax, H2S molecular beam passivation of Ge(001) Microelectronic Engineering. ,vol. 88, pp. 399- 402 ,(2011) , 10.1016/J.MEE.2010.09.012
Kyoung H. Kim, Roy G. Gordon, Andrew Ritenour, Dimitri A. Antoniadis, Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks Applied Physics Letters. ,vol. 90, pp. 212104- ,(2007) , 10.1063/1.2741609
S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, A. Sakai, O. Nakatsuka, S. Zaima, Ge1−xSnx stressors for strained-Ge CMOS Solid-state Electronics. ,vol. 60, pp. 53- 57 ,(2011) , 10.1016/J.SSE.2011.01.022
Martin M Frank, Steven J Koester, Matthew Copel, John A Ott, Vamsi K Paruchuri, Huiling Shang, Rainer Loesing, None, Hafnium oxide gate dielectrics on sulfur-passivated germanium Applied Physics Letters. ,vol. 89, pp. 112905- ,(2006) , 10.1063/1.2338751
M. Bauer, J. Taraci, J. Tolle, A. V. G. Chizmeshya, S. Zollner, David J. Smith, J. Menendez, Changwu Hu, J. Kouvetakis, Ge–Sn semiconductors for band-gap and lattice engineering Applied Physics Letters. ,vol. 81, pp. 2992- 2994 ,(2002) , 10.1063/1.1515133