Hafnium oxide gate dielectrics on sulfur-passivated germanium
作者： Martin M Frank , Steven J Koester , Matthew Copel , John A Ott , Vamsi K Paruchuri
DOI: 10.1063/1.2338751
关键词:
摘要: Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The layer largely preserved after atomic deposition the high-κ dielectric material HfO2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation moderate and results in an electrically passivating GeOS interface layer. HfO2∕GeOS∕Ge gate stack exhibits lower fixed charge state density than a more conventional HfO2∕GeON∕Ge fabricated via ammonia gas treatment.
scitation.org
harvard.edu
aip.org 
sci-hub.se 参考文章(30)
Matthias Passlack, Methodology for Development of High-κ Stacked Gate Dielectrics on III–V Semiconductors Materials Fundamentals of Gate Dielectrics. pp. 403- 467 ,(2005) , 10.1007/1-4020-3078-9_12
Materials Fundamentals of Gate Dielectrics Materials Fundamentals of Gate Dielectrics. Edited by A. A. Demkov and A. Navrotsky. Berlin: Springer. ,(2005) , 10.1007/1-4020-3078-9
Martin M Frank, Glen D Wilk, Dmitri Starodub, Torgny Gustafsson, Eric Garfunkel, Yves J Chabal, John Grazul, David A Muller, None, HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition Applied Physics Letters. ,vol. 86, pp. 152904- ,(2005) , 10.1063/1.1899745
J.J.-H. Chen, N.A. Bojarczuk, H. Shang, M. Copel, J.B. Hannon, J. Karasinski, E. Preisler, S.K. Banerjee, S. Guha, Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge IEEE Transactions on Electron Devices. ,vol. 51, pp. 1441- 1447 ,(2004) , 10.1109/TED.2004.833593
John R Brews, Edward H Nicollian, Mos (Metal Oxide Semiconductor) Physics and Technology ,(1982)
V. R. Deline, William Katz, C. A. Evans, Peter Williams, Mechanism of the SIMS matrix effect Applied Physics Letters. ,vol. 33, pp. 832- 835 ,(1978) , 10.1063/1.90546
Nan Wu, Qingchun Zhang, Chunxiang Zhu, Chia Chin Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, Byung Jin Cho, Albert Chin, Dim-Lee Kwong, A. Y. Du, C. H. Tung, N. Balasubramanian, Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Applied Physics Letters. ,vol. 84, pp. 3741- 3743 ,(2004) , 10.1063/1.1737057
E. P. Gusev, H. Shang, M. Copel, M. Gribelyuk, C. D’Emic, P. Kozlowski, T. Zabel, Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100) Applied Physics Letters. ,vol. 85, pp. 2334- 2336 ,(2004) , 10.1063/1.1794849
A. Lamzatouar, O. Palais, O. B. M. Hardouin Duparc, J. Thibault, A. Charaï, Relationship between structure, segregation and electrical activity in grain boundaries Journal of Materials Science. ,vol. 40, pp. 3163- 3167 ,(2005) , 10.1007/S10853-005-2679-Z
E. P. Gusev, V. Narayanan, M. M. Frank, Advanced high-κ dielectric stacks with polySi and metal gates: recent progress and current challenges Ibm Journal of Research and Development. ,vol. 50, pp. 387- 410 ,(2006) , 10.1147/RD.504.0387