Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System
作者： Aboozar Mosleh , Murtadha A. Alher , Larry C. Cousar , Wei Du , Seyed Amir Ghetmiri
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摘要: Germanium tin alloys were grown directly on Si substrate at low temperatures using a cold-wall ultra-high vacuum chemical vapor deposition system. Epitaxial growth was achieved by adopting commercial gas precursors of germane and stannic chloride without any carrier gases. The X-ray diffraction analysis showed the incorporation Sn that Ge1-xSnx films are fully epitaxial strain relaxed. Tin in Ge matrix found to vary from 1% 7%. scanning electron microscopy images energy dispersive spectra maps show uniform continuous film growth. Investigation parameters shows high flow rates etched due production HCl. photoluminescence study reduction bandgap 0.8 eV 0.55 as result incorporation.
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