Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

摘要: Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on surfaces passivated by ultrathin (1–2nm) ALD Hf3N4 or AlN exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low 0.8nm, no significant flatband voltage shifts, midgap density of interface states values 2×1012cm−1eV−1. Functional n-channel p-channel field effect transistors interlayer/high-κ oxide/metal gate stacks are demonstrated.