The effect of magnetic ordering on light emitting intensity of Eu-doped GaN
作者： Yanchen Li , Sheng Yu , Xianquan Meng , Yihe Liu , Yonghe Zhao
DOI: 10.1088/0022-3727/46/21/215101
关键词: Light emission 、 Peak intensity 、 Ion implantation 、 Condensed matter physics 、 Materials science 、 Doping 、 Magnetic field 、 Photoluminescence 、 Ferromagnetism 、 Intensity (heat transfer) 、 Optoelectronics
摘要: The optical and magnetic properties of Eu-doped GaN prepared by ion implantation were reported the effect field on photoluminescence (PL) behaviour was studied. PL spectra show that samples exhibit strong emission at around 622.0 nm. Magnetic measurement reveals ferromagnetic ordering room temperature. There an obvious correlation between intensity external field. When 1000 Oe applied to sample, a decrease roughly 24% in peak 622 nm observed. mechanics ordering-modulated light rare-earth-doped films is discussed. It may have applications producing magneto-optical devices.
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J. Hite, G. T. Thaler, R. Khanna, C. R. Abernathy, S. J. Pearton, J. H. Park, A. J. Steckl, J. M. Zavada, Optical and magnetic properties of Eu-doped GaN Applied Physics Letters. ,vol. 89, pp. 132119- ,(2006) , 10.1063/1.2358293
P. Dorenbos, E. van der Kolk, Location of lanthanide impurity levels in the III-V semiconductor GaN Applied Physics Letters. ,vol. 89, pp. 061122- ,(2006) , 10.1063/1.2336716
Guozhong Xing, Guichuan Xing, Mingjie Li, Edbert Jarvis Sie, Dandan Wang, Arief Sulistio, Quan-lin Ye, Cheng Hon Alfred Huan, Tom Wu, Tze Chien Sum, Charge transfer dynamics in Cu-doped ZnO nanowires Applied Physics Letters. ,vol. 98, pp. 102105- ,(2011) , 10.1063/1.3558912
Dong-gun Lee, Atsushi Nishikawa, Yoshikazu Terai, Yasufumi Fujiwara, Eu luminescence center created by Mg codoping in Eu-doped GaN Applied Physics Letters. ,vol. 100, pp. 171904- ,(2012) , 10.1063/1.4704920
Masahiko Hashimoto, Akira Yanase, Ryo Asano, Hiroyuki Tanaka, Hyungjin Bang, Katsuhiro Akimoto, Hajime Asahi, Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 42, pp. L1112- L1115 ,(2003) , 10.1143/JJAP.42.L1112
A Sedhain, C Ugolini, JY Lin, HX Jiang, JM Zavada, None, Photoluminescence properties of erbium doped InGaN epilayers Applied Physics Letters. ,vol. 95, pp. 041113- ,(2009) , 10.1063/1.3193532
K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R. W. Martin, K. P. O'Donnell, S. Ruffenach, O. Briot, High temperature annealing and optical activation of Eu implanted GaN Applied Physics Letters. ,vol. 85, pp. 2712- 2714 ,(2004) , 10.1063/1.1801686
Joo Han Kim, M. R. Davidson, Paul. H. Holloway, Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering Applied Physics Letters. ,vol. 83, pp. 4746- 4748 ,(2003) , 10.1063/1.1627471
Shinya Higuchi, Atsushi Ishizumi, Junji Sawahata, Katsuhiro Akimoto, Yoshihiko Kanemitsu, Luminescence and energy-transfer mechanisms in Eu 3 + -doped GaN epitaxial films Physical Review B. ,vol. 81, pp. 035207- ,(2010) , 10.1103/PHYSREVB.81.035207
Hyungjin Bang, Shinichi Morishima, Junji Sawahata, Jongwon Seo, Mikio Takiguchi, Masato Tsunemi, Katsuhiro Akimoto, Masaharu Nomura, Concentration quenching of Eu-related luminescence in Eu-doped GaN Applied Physics Letters. ,vol. 85, pp. 227- 229 ,(2004) , 10.1063/1.1771806