Location of lanthanide impurity levels in the III-V semiconductor GaN
作者： P. Dorenbos , E. van der Kolk
DOI: 10.1063/1.2336716
关键词:
摘要: Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical electronic properties of the lanthanides in III-V semiconductor GaN. For first time location 4fn ground state energy each divalent trivalent ion relative valence conduction bands GaN presented. The authors will demonstrate that quantum efficiency luminescence Pr3+, Eu3+, Tb3+, Yb3+ depends levels. Level also controls electron acceptor donor ions.
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P. Dorenbos, E.V.D. van Loef, A.P. Vink, E. van der Kolk, C.W.E. van Eijk, K.W. Krämer, H.U. Güdel, W.M. Higgins, K.S. Shah, Level location and spectroscopy of Ce3+, Pr3+, Er3+, and Eu2+ in LaBr3 Journal of Luminescence. ,vol. 117, pp. 147- 155 ,(2006) , 10.1016/J.JLUMIN.2005.04.016
Christian Klixbüll Jørgensen, Modern aspects of ligand field theory North-Holland Publishing. ,(1971)
H. J. Lozykowski, W. M. Jadwisienczak, J. Han, I. G. Brown, Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium Applied Physics Letters. ,vol. 77, pp. 767- 769 ,(2000) , 10.1063/1.1306645
W. H. Fonger, C. W. Struck, Eu+35D Resonance Quenching to the Charge‐Transfer States in Y2O2S, La2O2S, and LaOCl The Journal of Chemical Physics. ,vol. 52, pp. 6364- 6372 ,(1970) , 10.1063/1.1672952
Mary T. Berry, P. Stanley May, Hong Xu, Temperature Dependence of the Eu3+ 5D0 Lifetime in Europium Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) The Journal of Physical Chemistry. ,vol. 100, pp. 9216- 9222 ,(1996) , 10.1021/JP953702X
S.D. Alaruri, A.J. Brewington, M.A. Thomas, J.A. Miller, High-temperature remote thermometry using laser-induced fluorescence decay lifetime measurements of Y/sub 2/O/sub 3/:Eu and YAG:Tb thermographic phosphors IEEE Transactions on Instrumentation and Measurement. ,vol. 42, pp. 735- 739 ,(1993) , 10.1109/19.231599
K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, S. Porowski, Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films Physical Review B. ,vol. 60, pp. 1471- 1473 ,(1999) , 10.1103/PHYSREVB.60.1471
P. Dorenbos, The Eu3+ charge transfer energy and the relation with the band gap of compounds Journal of Luminescence. ,vol. 111, pp. 89- 104 ,(2005) , 10.1016/J.JLUMIN.2004.07.003
G. K. Liu, M. P. Jensen, P. M. Almond, Systematic behavior of charge-transfer transitions and energy level variation in soft donor complexes of the trivalent lanthanides. Journal of Physical Chemistry A. ,vol. 110, pp. 2081- 2088 ,(2006) , 10.1021/JP0558674
H. Bang, S. Morishima, Z. Li, K. Akimoto, M. Nomura, E. Yagi, Comparative Study on the Optical Properties of Eu:GaN with Tb:GaN Physica Status Solidi B-basic Solid State Physics. ,vol. 228, pp. 319- 323 ,(2001) , 10.1002/1521-3951(200111)228:1<319::AID-PSSB319>3.0.CO;2-J