作者: Yang Yang , Alan J. Heeger
DOI: 10.1080/10587259408039288
关键词: Tin oxide 、 Indium 、 Quantum efficiency 、 Anode 、 Polyaniline 、 Optoelectronics 、 Materials science 、 Bilayer 、 Polymer light emitting diodes 、 Active layer
摘要: Abstract We reported that by using a combination of polyaniline (PANI) and Indium/tin oxide (ITO) as the transparent anode polymer light emitting diode with poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene), (MEH-PPV), active layer, device performance can be significantly improved. The operating voltage reduced ∼ 30-50%, quantum efficiency increased 30-40% respect to devices IT0 alone hole-injecting anode. barrier height at PANI/MEH-PPV interface is estimated 0.08-0.12eV, approximately half ITO/MEH-PPV interface.