Method for manufacturing non-volatile memory
作者： Hang-Ting Lue , Szu-Yu Wang
DOI:
关键词: Trapping 、 Charge (physics) 、 Materials science 、 Process (computing) 、 Layer (electronics) 、 Composite number 、 Non-volatile memory 、 Thermal 、 Optoelectronics 、 Substrate (electronics)
摘要: A non-volatile memory located on a substrate is provided. The includes tunnel layer, charge trapping composite gate and source/drain region. layer the substrate, over layer. region in both sides of With has relatively better programming erasing performance higher data retention ability. Furthermore, since there no need to perform thermal process formation budget manufacturing low.
lens.org 参考文章(13)
Szu Yu Wang, Charge trapping dielectric structure for non-volatile memory ,(2006)
Arup Bhattacharyya, Gary D. Grise, Roy S. Bass, Non-volatile memory cell having Si rich silicon nitride charge trapping layer ,(1987)
Zhong Dong, Chuck Jang, Ching-Hwa Chen, Floating gate nitridation ,(2002)
Robert B. Ogle, Nicholas H. Tripsas, Arvind Halliyal, Mark T. Ramsbey, Kuo-Tung Chang, Use of high-K dielectric material in modified ONO structure for semiconductor devices ,(2001)
Arup Bhattacharyya, Novel low power non-volatile memory and gate stack ,(2005)
Maitreyee Mahajani, En-Hsing Chen, Andrew J. Walker, Storage layer optimization of a nonvolatile memory device ,(2003)
Chih Yuan Lu, Han Chao Lai, Chih Chieh Yeh, Wen Jer Tsai, Tao Cheng Lu, Method for manufacturing a multiple-bit-per-cell memory ,(2005)
Jean Y. Yang, Tazrien Kamal, Arvind Halliyal, Hidehiko Shiraiwa, Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device ,(2003)
John Jianshi Wang, Zhigang Wang, Jiang Li, Nian Yang, Flash memory devices with oxynitride dielectric as the charge storage media ,(2003)