Characterization of interface states at Ni/n-Si Schottky barriers fromI –V characteristics
作者： P. P. Sahay , R. S. Srivastava
关键词: Metal 、 Nickel 、 Wafer 、 Schottky diode 、 Epitaxy 、 Band gap 、 Vacuum deposition 、 Torr 、 Analytical chemistry 、 Chemistry 、 General Materials Science 、 General chemistry 、 Condensed matter physics
摘要: Experiments were performed on Ni/n-Si(111) Schottky diodes fabricated by the thermal vacuum deposition of nickel n/n+ Si epitaxial wafer at ˜ 10−5 torr pressure. The non-equilibrium occupation functions interface states studied using Shockley-Read-Hall (SRH) theory and considering charge exchange between metal states. Interface density was determined from (I - V) characteristics metal-interfacial layer-semiconductor (MIS) structure. found to be in range 1012 eV−1 cm−2 with a broad peak band gap about 0.554 eV below conduction edge.
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