Solid-State Image Pick-up Device and Method of manufacturing the same
作者： Kazuyoshi Mizushima , Hiroyuki Okada
DOI:
关键词: Dielectric 、 Photodiode 、 Layer (electronics) 、 Breakdown voltage 、 Etching (microfabrication) 、 Substrate (electronics) 、 Electrode 、 Electronic engineering 、 Gate dielectric 、 Composite material 、 Materials science
摘要: In a solid-state image pickup device, photodiode (32) and transfer channel (33) are formed in semiconductor substrate (31). A gate electrode (35) is on dielectric film (34) the An interlayer (36) over first light-shield (37) for shielding from light (36). (38, 44) layer, second shield layer (42) thereon. The composed of (38) (44), during etching film, exhibits lower rate than beneath film. When etching, example, reduction thickness can vary significantly. However, desired breakdown voltage achieved by substantially irrespective conditions, permits thinner films to be used.
lens.org 参考文章(6)
Donald L. Barton, Planarization of dielectric films on integrated circuits ,(1984)
Armin Karl Weiss, Light sensing devices with lenticular pixels ,(1986)
Trung T. Doan, Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques ,(1991)
Yasuyuki Deguchi, Hiriyuki Okada, Wataru Kamisaka, Solid-state image pickup device and method of manufacturing the same ,(1992)
Hiroshi Nozawa, Kazunari Watanabe, Solid state image sensing device ,(1988)