Solid state image sensing device

摘要: In a solid state image sensing device comprising: semiconductor substrate; photosensitive pixel area disposed on the substrate for generating signal charges in response to incident light and storing charges; charge transfer adjacent transferring stored area; electrode provided above area, comprises: high melting temperature metal layer composed of molybdenum silicide MoSi formed an insulating having ample thickness between electrode. The shielding efficiency can be improved occurrence smear phenomenon prevented resulting device.