Multilevel conductor structure and method
作者： Charles T Naber
DOI:
关键词: Optoelectronics 、 Silicon 、 Strained silicon 、 Insulator (electricity) 、 Integrated circuit 、 Silicon oxide 、 Conductor 、 Doping 、 Materials science 、 Electronic engineering 、 Electrical conductor
摘要: The present invention relates to a multilevel conductor structure and method of insulating an upper level conductors from lower on silicon substrate integrated circuit. An undoped oxide insulator layer doped are successively placed the is heated temperature which sufficient cause soften flow above produce tapered steps over edges conductors. then formed layer. between prevents doping atoms penetrating into source or drain regions usually in vicinity change their conductivity.
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