Interlayer dielectric film, and semiconductor device and solid-state image pickup device using the same, and method of manufacturing the same
作者： Kazuyoshi Mizushima , Hiroyuki Okada
DOI:
关键词: Semiconductor device 、 Electronic engineering 、 Electrical breakdown 、 Photodiode 、 Materials science 、 Electromagnetic shielding 、 Etching (microfabrication) 、 Electrode 、 Gate dielectric 、 Optoelectronics 、 Dielectric
摘要: In the solid-state image pickup device of invention, a photodiode is formed on semiconductor substrate, and transfer channel at specific gap to photodiode. On gate electrode through dielectric film provided, an interlayer electrode. Furthermore, first light-shield for shielding from light film. film, second least this case, composed multiple layers in etching smaller rate beneath As result, by etching, example, reduction thickness varies significantly. By such variation owing necessity obtaining specified breakdown voltage, may be reduced thickness.
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