Theory Of Silicon Nanocrystals
作者： C. Delerue , G. Allan , M. Lannoo
DOI: 10.1007/978-94-010-0149-6_22
关键词: Porous silicon 、 Silicon 、 Engineering physics 、 Luminescence 、 Radiative transfer 、 Materials science 、 Local-density approximation 、 Silicon nanocrystals 、 Quantum dot 、 Nanocrystal
摘要: The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using in optoelectronics. One likely explanation is quantum confinement, induced by formation nanocrystallites. However, experimental data reveal a complex situation characteristic several radiative as well non channels. Our main aim this chapter will thus be review relevant theoretical information concerning optical properties Si nanocrystals order identify these
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