Chapter 5 Molecular-Beam Epitaxy of IV-VI Compound Heterojunctions and Superlattices

摘要: Publisher Summary Major new advances in epitaxial growth techniques have contributed to an improved understanding of the properties IV–VI materials and their alloys. The creation sophisticated heterojunctions, quantum wells, strained-layer superlattices can be attributed successful by molecular-beam epitaxy (MBE). chapter presents overview research activity area IV–VI-based structures highlights significant achievements. From a materials-oriented point view, much recent activities centered on techniques, especially MBE, metalorganic chemical vapor deposition (MOCVD), hot-wall (HWE), development alloys with higher energy bandgaps, exploration magnetically active alloys, lattice-mismatched substrates, that are lattice mismatched or components different crystal structures. these exciting areas science, physics, engineering. lead-salt compounds classic extensively reviewed some distinguish them from II–VI discussed chapter.