High compositional homogeneity of CdTexSe1−x crystals grown by the Bridgman method
作者： U. N. Roy , A. E. Bolotnikov , G. S. Camarda , Y. Cui , A. Hossain
DOI: 10.1063/1.4907250
关键词: Particle detector 、 Optoelectronics 、 Infrared 、 Materials science 、 Concentration ratio 、 Crystallography 、 Ingot 、 Wide-bandgap semiconductor 、 Homogeneity (physics) 、 National Synchrotron Light Source 、 Beamline
摘要: We obtained high-quality CdTexSe1−x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of was evaluated X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. homogeneity highly uniform throughout ingot, and effective segregation coefficient Se ∼1.0. This high offers potential opportunity to enhance yield materials for both infrared substrate radiation-detector applications, so greatly lowering cost production also offering us prospect grow large-diameter use as large-area substrates producing higher efficiency gamma-ray detectors. concentration secondary phases found be much lower, eight- ten fold compared that conventional CdxZn1−xTe (CdZnTe or CZT).
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