An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers
作者： R. Gul , U. N. Roy , R. B. James
DOI: 10.1063/1.4978377
关键词:
摘要: In this research, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point associated different dopants were observed, these analyzed detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between nature abundance of influence on resistivity, electron mobility-lifetime (μτe) product, trapping time. used current-deep level transient spectroscopy determine energy, capture cross-section, concentration each trap. Furthermore, data de-trapping times charge carriers. In-doped detectors, uncompensated Cd vacancies (VCd−) identified as a dominant The VCd− almost compensated Al, Ni, Sn, addition co-doping In. Dominant traps related dopant found at Ev + 0.36 eV an...
harvard.edu
scitation.org
sci-hub.se 参考文章(20)
R.B. James, T.E. Schlesinger, Jim Lund, Michael Schieber, CHAPTER 9 - Cd1−xZnxTe Spectrometers for Gamma and X-Ray Applications Semiconductors and Semimetals. ,vol. 43, pp. 335- 381 ,(1995) , 10.1016/S0080-8784(08)62748-9
U Kaufmann, J Windscheif, G Brunthaler, Identification of the isolated deep Ni acceptor in CdTe and ZnTe: comparison with isomorphous systems Journal of Physics C: Solid State Physics. ,vol. 17, pp. 6169- 6176 ,(1984) , 10.1088/0022-3719/17/34/017
Z. Li, Systematic modelling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment. ,vol. 403, pp. 399- 416 ,(1998) , 10.1016/S0168-9002(97)01099-1
R. Gul, A. Bolotnikov, H. K. Kim, R. Rodriguez, K. Keeter, Z. Li, G. Gu, R. B. James, Point Defects in CdZnTe Crystals Grown by Different Techniques Journal of Electronic Materials. ,vol. 40, pp. 274- 279 ,(2011) , 10.1007/S11664-010-1504-X
Gary C. Tepper, Royal Kessick, Csaba Szeles, Investigation of the electronic properties of cadmium zinc telluride surfaces using pulsed laser microwave cavity perturbation International Symposium on Optical Science and Technology. ,vol. 4507, pp. 79- 89 ,(2001) , 10.1117/12.450744
U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, K. Lee, W. Lee, R. Tappero, G. Yang, R. Gul, R. B. James, High compositional homogeneity of CdTexSe1−x crystals grown by the Bridgman method APL Materials. ,vol. 3, pp. 026102- ,(2015) , 10.1063/1.4907250
K.H. Kim, R. Gul, V. Carcelén, A.E. Bolotinkov, G.S. Carmarda, G. Yang, A. Hossain, Y. Cui, R.B. James, J. Hong, S.U. Kim, Defect levels and thermomigration of Te precipitates in CdZnTe:Pb Journal of Crystal Growth. ,vol. 312, pp. 781- 784 ,(2010) , 10.1016/J.JCRYSGRO.2009.11.069
R. Gul, U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, W. Lee, G. Yang, Y. Cui, A. Burger, R. B. James, Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation APL Materials. ,vol. 3, pp. 040702- ,(2015) , 10.1063/1.4917270
M. Schieber, T.E. Schlesinger, R.B. James, H. Hermon, H. Yoon, M. Goorsky, Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals Journal of Crystal Growth. ,vol. 237, pp. 2082- 2090 ,(2002) , 10.1016/S0022-0248(01)02314-4
A. Hossain, V. Yakimovich, A.E. Bolotnikov, K. Bolton, G.S. Camarda, Y. Cui, J. Franc, R. Gul, K-H Kim, H. Pittman, G. Yang, R. Herpst, R.B. James, Development of Cadmium Magnesium Telluride (Cd1−xMgxTe) for room temperature X- and gamma-ray detectors Journal of Crystal Growth. ,vol. 379, pp. 34- 40 ,(2013) , 10.1016/J.JCRYSGRO.2012.11.044